MULTICOMP - トランジスタ 製品
二極式 (Bipolar)
2N2484
1611575
TRANSISTOR; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Power Dissipation Pd:360mW; DC Collector Current:50mA; DC Current Gain hFE:30; Transistor Case Style:TO-18; No. of Pins:3; Case Style:TO-18; Max Current Ic Continuous a:50mA; Max Voltage Vce Sat:0.35V; Min Hfe:250; Power Dissipation:360mW; Termination Type:Through Hole; Transistor Type:Bipolar
2N2484
4183186
TRANSISTOR; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:60V; Power Dissipation Pd:360mW; DC Collector Current:50mA; DC Current Gain hFE:30; Transistor Case Style:TO-18; No. of Pins:3; Case Style:TO-18; Max Current Ic Continuous a:50mA; Max Voltage Vce Sat:0.35V; Min Hfe:250; Power Dissipation:360mW; Termination Type:Through Hole; Transistor Type:Bipolar
2N2222A
4156195
BIPOLAR TRANSISTOR, NPN, 40V, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:500mW; DC Collector Current:600mA; DC Current Gain Max (hfe):100
2N2222A
9207120
BIPOLAR TRANSISTOR, NPN, 40V, TO-18; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:500mW; DC Collector Current:600mA; DC Current Gain Max (hfe):100
2N1711
1611558
TRANSISTOR; Transistor Polarity:NPN; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:35; Transistor Case Style:TO-39; No. of Pins:3; Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:0.5A; Hfe Min:40; Package / Case:TO-39; Power Dissipation:3W; Termination Type:Through Hole; Transistor Type:Bipolar
2N1711
2416256
TRANSISTOR; Transistor Polarity:NPN; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:35; Transistor Case Style:TO-39; No. of Pins:3; Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:0.5A; Hfe Min:40; Package / Case:TO-39; Power Dissipation:3W; Termination Type:Through Hole; Transistor Type:Bipolar
2N5301
4956151
BIPOLAR TRANSISTOR, NPN, 40V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:2MHz; Power Dissipation Pd:200W; DC Collector Current:30A; DC Current Gain Max (hfe):40
2N5551
4642480
TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Gain Bandwidth ft Typ:300MHz; Power Dissipation Pd:625mW; DC Collector Current:600mA; DC Current Gain hFE:80; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (18-Jun-2010); Collector Emitter Voltage Vces:0.15V; Continuous Collector Current Ic Max:600mA; Current Ic Continuous a Max:600mA; Current Ic hFE:10mA; Device Marking:2N5551; Gain Bandwidth ft Min:100MHz; Hfe Min:80; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:b; Power Dissipation:625mW; Power Dissipation Ptot Max:350mW; SVHC (Secondary):Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010); Termination Type:Through Hole; Transistor Type:Bipolar; Voltage Vcbo:180V
JFET (JFET)
RF (RF)
2N5416
9207090
RF TRANSISTOR, PNP, TO-39; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Gain Bandwidth ft Typ:15MHz; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:30; No. of Pins:3; Continuous Collector Current Ic:1A; Gain Bandwidth ft Min:15MHz; No. of Transistors:1; Package / Case:TO-39; Termination Type:Through Hole; Transistor Type:RF Bipolar; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:50mA; Full Power Rating Temperature:25°C; Hfe Min:30; Power Dissipation Ptot Max:10W; Transistor Case Style:TO-39; Voltage Vcbo:350V
2N5416MC
4399250
TRANSISTOR, PNP RF TO-39; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:300V; Gain Bandwidth ft Typ:15MHz; No. of Pins:3; Gain Bandwidth ft Min:15MHz; No. of Transistors:1; Package / Case:TO-39; Transistor Type:Power RF; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:50mA; Full Power Rating Temperature:25°C
Hfe Min:30; Power Dissipation Ptot Max:10W; Transistor Case Style:TO-39; Voltage Vcbo:350V
BF199
1574387
TRANSISTOR, NPN 0.5A 25V TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Gain Bandwidth ft Typ:1100MHz; Power Dissipation Pd:350mW; DC Collector Current:50mA; DC Current Gain hFE:38; Operating Temperature Range:-55°C to +150°C; RF Transistor Case:TO-92; No. of Pins:3; Continuous Collector Current Ic:10mA; Package / Case:TO-92; Termination Type:Through Hole; Transistor Type:RF Bipolar; Transistor Case Style:TO-92
BFY90
9207139
TRANSISTOR, NPN TO-72; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Gain Bandwidth ft Typ:1.4MHz; No. of Pins:4; Gain Bandwidth ft Min:1400MHz; No. of Transistors:1; Package / Case:TO-72; Transistor Type:Small Signal RF; Continuous Collector Current Ic Max:0.5A; Current Ic Continuous a Max:0.5A; Current Ic hFE:150mA; Full Power Rating Temperature:25°C; Hfe Min:40; Noise Factor Max:5.5dB; Power Dissipation Ptot Max:0.2W; Transistor Case Style:TO-72; Voltage Vcbo:40V
BFY90MC
4399298
TRANSISTOR, NPN TO-72; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Gain Bandwidth ft Typ:1.4MHz; No. of Pins:4; Gain Bandwidth ft Min:1400MHz; No. of Transistors:1; Package / Case:TO-72; Transistor Type:Small Signal RF; Continuous Collector Current Ic Max:0.5A; Current Ic Continuous a Max:0.5A; Current Ic hFE:150mA; Full Power Rating Temperature:25°C; Hfe Min:40; Noise Factor Max:5.5dB; Power Dissipation Ptot Max:0.2W; Transistor Case Style:TO-72; Voltage Vcbo:40V
モスフェット (MOSFET)
STP60NF06
2067296
MOSFET, N, TO-220; Transistor Polarity:N; Max Current Id:60A; Max Voltage Vds:60V; On State Resistance:0.016ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:4V; Power Dissipation:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2010); Alternate Case Style:SOT-78B; Case Style:TO-220; Cont Current Id:60A; Device Marking:STP60NF06; On State resistance @ Vgs = 10V:0.016ohm; Power Dissipation Pd:110W; Pulse Current Idm:240A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:60V; Typ Voltage Vgs th:1V; Voltage Vds:60V; Voltage Vgs Rds on Measurement:10V
STP80PF55
2067299
MOSFET, P, TO-220; Transistor Polarity:P; Current Id Max:80A; Drain Source Voltage Vds:55V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:-10V; Voltage Vgs Max:3V; Power Dissipation:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (18-Jun-2010); Continuous Drain Current Id:80A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:300W; Termination Type:Through Hole; Threshold Voltage Vgs Typ:-3V; Transistor Type:MOSFET; Voltage Vds Typ:-55V; Voltage Vgs Rds on Measurement:-10V
STP55NF06L
2067295
MOSFET, N TO-220; Transistor Polarity:N; Max Voltage Vds:60V; On State Resistance:0.018ohm; Rds Measurement Voltage:10V; Power Dissipation:95W; Transistor Case Style:TO-220; No. of Pins:3; Alternate Case Style:SOT-78B; Case Style:TO-220 (SOT-78B); Cont Current Id:55A; Max Junction Temperature Tj:175°C; Min Junction Temperature, Tj:-55°C; Min Voltage Vgs th:1V; N-channel Gate Charge:27nC; On State Resistance @ Vgs = 4.5V:0.02ohm; On State resistance @ Vgs = 10V:0.018ohm; Power Dissipation Pd:95W; Pulse Current Idm:220A; Rate of Voltage Change dv / dt:20V/μs; Transistor Type:MOSFET; Voltage Vds:60V; Voltage Vgs Rds N Channel:10V
STP75NF75
2067297
MOSFET, N, TO-220; Transistor Polarity:N; Current Id Max:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.011ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:3V; Power Dissipation:300W; Transistor Case Style:TO-220; No. of Pins:3; Alternate Case Style:SOT-78B; Continuous Drain Current Id:80A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:117nC; On State resistance @ Vgs = 10V:0.011ohm; Package / Case:TO-220; Power Dissipation Pd:300W; Pulse Current Idm:320A; Rate of Voltage Change dv / dt:12V/μs; Termination Type:Through Hole; Threshold Voltage Vgs Typ:3V; Transistor Type:MOSFET; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Rds N Channel:10V; Voltage Vgs Rds on Measurement:10V
Voltage Vgs th Min:2V
STW20NK50Z
2067300
MOSFET, N, TO-247; Transistor Polarity:N; Current Id Max:17A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.27ohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:3.75V; Power Dissipation:190W; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2010); Alternate Case Style:SOT-249; Continuous Drain Current Id:17A; On State resistance @ Vgs = 10V:0.27ohm; Package / Case:TO-247; Power Dissipation Pd:190W; Pulse Current Idm:68A; Termination Type:Through Hole; Threshold Voltage Vgs Typ:3.75V; Transistor Type:MOSFET; Voltage Vds Typ:500V; Voltage Vgs Rds on Measurement:10V
MJ4502
4347780
TRANSISTOR, PNP TO-3; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:90V; No. of Pins:2; Av Current Ic:30A; Case Style:TO-3 (TO-204AA); Current Ic @ Vce Sat:7.5A; Current Ic hFE:7.5A; Full Power Rating Temperature:25°C; Max Current Gain Hfe:100; Max Current Ic:30A; Max Current Ic Continuous a:30A; Max Power Dissipation Ptot:200W; Min Gain Bandwidth ft:2MHz; Min Hfe:25; No. of Transistors:1; Power Dissipation:200W; Transistor Type:Power General Purpose; Voltage Vcbo:100V
IRF630
2067291
MOSFET, N, TO-220; Transistor Polarity:N; Max Voltage Vds:200V; On State Resistance:0.4ohm; Rds Measurement Voltage:10V; Power Dissipation:100W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC; Alternate Case Style:SOT-78B; Case Style:TO-220; Cont Current Id:9A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; No. of Transistors:1; On State resistance @ Vgs = 10V:0.4ohm; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:100W; Pulse Current Idm:36A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Capacitance Ciss:540pF; Typ Reverse Recovery Time, trr:170ns; Typ Voltage Vds:200V; Typ Voltage Vgs th:3V; Voltage Vgs Rds on Measurement:10V
ユニジャンクション (Unijunction)
2N4870
1653692
TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:1.5A; Peak Current:1μA; Valley Current Iv:5mA; Power Dissipation:0.3W; Transistor Case Style:TO-92; No. of Pins:3; Package / Case:TO-92; Termination Type:Through Hole; Transistor Polarity:PN; Transistor Type:Unijunction
2N4870
4642454
TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:1.5A; Peak Current:1μA; Valley Current Iv:5mA; Power Dissipation:0.3W; Transistor Case Style:TO-92; No. of Pins:3; Package / Case:TO-92; Termination Type:Through Hole; Transistor Polarity:PN; Transistor Type:Unijunction
2N2646
1653690
TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:2A; Peak Current:1μA; Valley Current Iv:6mA; Power Dissipation:0.3W; Transistor Case Style:TO-18; No. of Pins:3; Package / Case:TO-18; Termination Type:Through Hole; Transistor Polarity:PN; Transistor Type:Unijunction
2N2646
4642375
TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:2A; Peak Current:1μA; Valley Current Iv:6mA; Power Dissipation:0.3W; Transistor Case Style:TO-18; No. of Pins:3; Package / Case:TO-18; Termination Type:Through Hole; Transistor Polarity:PN; Transistor Type:Unijunction
2N4871
1653693
TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:1.5A; Peak Current:1μA; Valley Current Iv:7mA; Power Dissipation:0.3W; Transistor Case Style:TO-92; No. of Pins:3; Package / Case:TO-92; Termination Type:Through Hole; Transistor Polarity:PN; Transistor Type:Unijunction
2N4871
4642466
TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:1.5A; Peak Current:1μA; Valley Current Iv:7mA; Power Dissipation:0.3W; Transistor Case Style:TO-92; No. of Pins:3; Package / Case:TO-92; Termination Type:Through Hole; Transistor Polarity:PN; Transistor Type:Unijunction
2N2647
1653691
TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:2A; Peak Current:1μA; Valley Current Iv:10mA; Power Dissipation:0.3W; Transistor Case Style:TO-18; No. of Pins:3; Package / Case:TO-18; Termination Type:Through Hole; Transistor Polarity:PN; Transistor Type:Unijunction
2N2647
3934949
TRANSISTOR, UNIJUNCTION; Repetitive Peak Forward Current Itrm:2A; Peak Current:1μA; Valley Current Iv:10mA; Power Dissipation:0.3W; Transistor Case Style:TO-18; No. of Pins:3; Package / Case:TO-18; Termination Type:Through Hole; Transistor Polarity:PN; Transistor Type:Unijunction
